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BUY69A データシート(PDF) 2 Page - STMicroelectronics |
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BUY69A データシート(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 1.75 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collect or Cut-off Current (VBE =0) VCE =1000 V 1 mA IEBO Emitt er Cut-off Current (IC =0) VEB =8 V 1 mA VCEO(sus) Collect or-Emitter Sustaining Voltage IC = 100 mA 1000 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =8 A IB = 2.5 A 3.3 V VBE(s at) ∗ Base-Emitter Saturat ion Voltage IC =8 A IB = 2.5 A 2.2 V hFE ∗ DC Current G ain IC =2.5 A VCE =10 V 15 fT Transit ion F requency IC =0. 5 A VCE =10 V 10 MHz Is/b** Second Breakdown Collect or Current VCE =25 V 4 A ton Turn on Time IC = 5 A VCE =250 V IB1 =1 A 0.2 µs ts ts St orage Time Fall T ime IC =5 A VCE = 250 V IB1 =- IB2 =1 A 1.7 0.3 µs µs tf Fall T ime IC =8 A VCE =40 V IB1 =- IB2 =2.5 A 1 µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ∗∗ Pulsed: 1s, non repetitive pulse. For characteristics curves see the BUW34/5/6 series. BUY69A 2/4 |
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