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TS4962 データシート(PDF) 17 Page - STMicroelectronics |
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TS4962 データシート(HTML) 17 Page - STMicroelectronics |
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17 / 44 page ![]() DocID10968 Rev 9 17/44 TS4962 Electrical characteristics 44 Table 11. Electrical characteristics at VCC +2.4 V with GND = 0 V, Vicm = 1.2 V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit ICC Supply current No input signal, no load 1.7 mA ISTBY Standby current (1) No input signal, VSTBY = GND 10 nA Voo Output offset voltage No input signal, RL = 8 Ω 3 mV Pout Output power, G = 6 dB THD = 1% max, f = 1 kHz, RL = 4 Ω THD = 10% max, f = 1 kHz, RL = 4 Ω THD = 1% max, f = 1 kHz, RL = 8 Ω THD = 10% max, f = 1 kHz, RL = 8 Ω 0.42 0.61 0.3 0.38 W THD + N Total harmonic distortion + noise Pout = 150 mWRMS, G = 6 dB, 20 Hz < f < 20 kHz RL = 8 Ω + 15 µH, BW < 30 kHz 1 % Efficiency Efficiency Pout = 0.38 WRMS, RL = 4 Ω + ³ 15 µH Pout = 0.25 WRMS, RL = 8 Ω+ ³ 15 µH 77 86 % CMRR Common mode rejection ratio f = 217 Hz, RL = 8 Ω, G = 6 dB, ∆Vic = 200 mVpp 54 dB Gain Gain value (Rin in kΩ) V/V RSTBY Internal resistance from standby to GND 273 300 327 k Ω FPWM Pulse width modulator base frequency 280 kHz SNR Signal to noise ratio (A-weighting) Pout = 0.25 W, RL = 8 Ω 80 dB tWU Wake-up time 5 ms tSTBY Standby time 5 ms 273k Ω R in ------------------ 300k Ω R in ------------------ 327k Ω R in ------------------ |
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