SGSF324 datasheet(1/6 Pages) STMICROELECTRONICS

部品番号	SGSF324

部品情報	HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

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SGSF324

HIGH VOLTAGE FASTSWITCHING NPN

POWER TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPE

s

NPN TRANSISTOR

s

HIGH VOLTAGE CAPABILITY

s

VERY HIGH SWITCHING SPEED

APPLICATIONS:

s

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The

SGSF324

is

manufactured

using

Multiepitaxial Mesa technology for cost-effective

high performance and uses a Hollow Emitter

structure to enhance switching speeds.

The SGSF series is designed for high speed

switching applications such as power supplies

and horizontal deflection circuits in TVs and

monitors.

INTERNAL SCHEMATIC DIAGRAM

September 1997

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Un it

VCES

Collect or-Emitter Volt age (VBE = 0)

1200

V

VCEO

Collect or-Emitter Volt age (IB = 0)

600

V

VEBO

Emitter-Base Volt age (IC =0)

7

V

IC

Collect or Current

4

A

ICM

Collect or Peak Current (tp <5 ms)

8

A

IB

Base Current

3

A

IBM

Base Peak Current (tp <5 ms)

6

A

Ptot

T otal Dissipation at Tc =25

oC70

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction T emperature

150

oC

1

2

3

TO-220

1/6

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