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ESM3045DV データシート(PDF) 2 Page - STMicroelectronics

部品番号 ESM3045DV
部品情報  NPN DARLINGTON POWER MODULE
PDF  8 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESM3045DV データシート(HTML) 2 Page - STMicroelectronics

  ESM3045DV Datasheet HTML 1Page - STMicroelectronics ESM3045DV Datasheet HTML 2Page - STMicroelectronics ESM3045DV Datasheet HTML 3Page - STMicroelectronics ESM3045DV Datasheet HTML 4Page - STMicroelectronics ESM3045DV Datasheet HTML 5Page - STMicroelectronics ESM3045DV Datasheet HTML 6Page - STMicroelectronics ESM3045DV Datasheet HTML 7Page - STMicroelectronics ESM3045DV Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Rthj-ca se
Rthc-h
Thermal Resistance Ju nction- case (transistor)
Max
Thermal Resistance Ju nction- case (diode)
Max
Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
1
2
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER #
Collecto r Cu t-of f
Current (RBE =5
Ω)
VCE =VCEV
VCE =VCEV
Tj = 100
oC
1. 5
17
mA
mA
ICEV #
Collecto r Cu t-of f
Current (VBE =-5)
VCE =VCEV
VCE =VCEV
Tj = 100
oC
1
12
mA
mA
IEBO #
Emitter Cut-off Current
(IC =0)
VEB =5 V
1
mA
VCEO(SUS) * Collecto r-Emitter
Sustaining Voltage
IC =0.2 A
L = 25 mH
Vclamp = 450 V
450
V
hFE
∗
DC Current Gain
IC =20 A
VCE = 5 V
120
VCE(sat)
∗ Collector-Emitter
Satu ration Vo ltage
IC =15 A
IB = 0 .3 A
IC =15 A
IB =0 .3 A
Tj = 100
oC
IC =20 A
IB = 1 .2 A
IC =20 A
IB =1 .2 A
Tj = 100
oC
1.2
1.3
1.4
1.6
2
2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Satu ration Vo ltage
IC =20 A
IB = 1 .2 A
IC =20 A
IB =1 .2 A
Tj = 100
oC
2.1
2.1
3
V
V
diC/dt
Rateof Riseof
On-state Collector
VCC =3 00 V
RC =0
tp =3
µs
IB1 =0.45 A
Tj = 100
oC
125
160
A/
µs
VCE(3
µs)•• Collector-Emitter
Dynamic Voltage
VCC = 300 V
RC =2 0
Ω
IB1 =0.45 A
Tj = 100
oC
4.5
8
V
VCE(5
µs)•• Collector-Emitter
Dynamic Voltage
VCC = 300 V
RC =2 0
Ω
IB1 =0.45 A
Tj = 100
oC
2.5
4. 5
V
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC =15 A
VCC =50 V
VBB =-5 V RBB =0.6
Ω
Vclamp = 450 V
IB1 =0.3 A
L = 0. 17 mH
Tj = 100
oC
2.1
0.15
0.5
4
0. 4
1. 2
µs
µs
µs
VCEW
Maximu m Collector
Emitter Voltage
With ou t Snubber
ICWoff =24 A IB1 =1.2 A
VBB =-5 V
VCC =5 0 V
L= 0. 1 mH
RBB =0.6
Ω
Tj =1 25
oC
450
V
VF
∗
Diod e Forward Voltage IF =20 A
Tj =1 00
oC1.7
2
V
IRM
Reverse Recovery
Current
VCC =2 00 V
IF =2 0 A
diF/dt = -125 A/
µsL < 0.05 µH
Tj =1 00
oC
11
14
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 1.47 + 0.0026 IF
P = 1.47 IF(AV) + 0.0026 I
2
F(RMS)
ESM3045DV
2/8



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