1

Characteristics

Table 1. Absolute ratings (limiting values, per diode, at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current

Tc = 135 °C, δ = 0.5 square wave

Per diode

10

A

Per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

430

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

150

°C

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

1.6

°C/W

Total

0.85

Rth(c)

Coupling

0.1

When the diodes 1 and 2 are used simultaneously :

Δ Tj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

350

µA

Tj = 125 °C

-

65

95

mA

VF(1)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

0.60

V

Tj = 125 °C

-

0.48

0.56

Tj = 25 °C

IF = 20 A

-

0.74

Tj = 125 °C

-

0.62

0.70

1. Pulse test: tp = 380 μs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.42 x IF(AV) + 0.014 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS20L60C

Characteristics

DS1595 - Rev 5

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