STPS20L15 datasheet(3/12 Pages) STMICROELECTRONICS

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STPS20L15

Characteristics

DocID5512 Rev 4

3/12

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current

Figure 2: Average forward current versus ambient

temperature (δ = 1)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values)

= 1

= 0.5

= 0.2

= 0.1

= 0.05

= tp/T

PF(AV)(W)

IF(AV)(A)

= tp/T

IF(AV)(A)

Tamb(°C)

Rth(j-a) = Rth(j-c)

Rth(j-a) = 15 °C/W

Rth(j-a) = 35 °C/W

100

125

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

1. 0E -4

1. 0E -3

1. 0E -2

1. 0E -1

1. 0E +0

0. 0

0. 2

0. 4

0. 6

0. 8

1. 0

= tp/T

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.5

δ = 0.2

Single pulse

tp(s)

1E -1

1E +0

1E +1

1E +2

5E +2

IR(mA)

VR(V)

Tj = 100 °C

Tj = 25 °C

0. 1

1. 0

5. 0

C(nF)

VR(V)

F = 1 MHz

Tj = 25 °C

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