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BDP949 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 BDP949
部品情報  isc Silicon NPN Power Transistor
PDF  3 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDP949 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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BDP949
isc Silicon NPN Power Transistor
www.iscsemi.com
2023-10-10
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage
-V(BR)CEO= 45V(Min)
·
For AF driver and output stages
·
High collector current
APPLICATIONS
·
Designed for power amplifier
·
high speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Peak collector current
5
A
IB
Base current
200
mA
PC
Collector Power Dissipation
3
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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