AT32032 datasheet(1/2 Pages) ISC

部品番号	AT32032

部品情報	Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

Logo

1 / 2 page

Silicon NPN Power Transistor

AT32032

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 5.5V(Min)

· SO-T323 Package

APPLICATIONS

· PDC, PHS, CDMA

· Communication Terminal

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

11

V

VCEO

Collector-Emitter Voltage

5.5

V

VEBO

Emitter-Base Voltage

1.5

V

IC

Collector Current-Continuous

32

mA

PT

Total Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNI

T

V(BR)CBO

Collector-Baser Breakdown Voltage

IC= 1uA, IB= 0A

11

--

V

ICBO

Collector-Base Cut-Off Current

VCB= 3V

--

2.0

uA

IEBO

Emitter Cutoff Current

VEB= 1V

--

5.0

uA

hFE

DC Current Gain

IC= 5mA, VCE= 2.7V

70

--

300

同様の部品番号 - AT32032

メーカー	部品番号	データシート	部品情報
Agilent(Hewlett-Packard...	AT32032	166Kb / 14P	AT32032

More results

同様の説明 - AT32032

メーカー	部品番号	データシート	部品情報
Advanced Semiconductor	MRF342	145Kb / 1P	SILICON POWER NPN TRANSISTOR
NEC	2SC2333	167Kb / 3P	NPN Silicon Power Transistor
Continental Device Indi...	C13003	160Kb / 4P	NPN SILICON POWER TRANSISTOR
Continental Device Indi...	CFC4662	106Kb / 3P	NPN SILICON POWER TRANSISTOR
Bourns Electronic Solut...	BUT11	128Kb / 5P	NPN SILICON POWER TRANSISTOR
Bourns Electronic Solut...	BUX84	125Kb / 6P	NPN SILICON POWER TRANSISTOR
Microsemi Corporation	2N2880	45Kb / 2P	NPN POWER SILICON TRANSISTOR
Microsemi Corporation	2N5002	58Kb / 2P	NPN POWER SILICON TRANSISTOR
M/A-COM Technology Solu...	MRF10031	195Kb / 5P	Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor
Kwang Myoung I.S. CO.,L...	TIP35CF	5Mb / 2P	Silicon NPN Power Transistor