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INA183A3IDBVT データシート(PDF) 4 Page - Texas Instruments |
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INA183A3IDBVT データシート(HTML) 4 Page - Texas Instruments |
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4 / 24 page ![]() 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Analog inputs, , IN+, IN– (1) Differential (VIN+) – (VIN–) GND – 0.3 26 V Common-mode (2) GND – 0.3 26 V Output (2) GND – 0.3 (IN+) + 0.3 V Operating temperature –55 150 °C Junction temperature 150 °C Storage temperature, Tstg –65 150 °C (1) VIN+ and VIN– are the voltages at the IN+ and IN– terminals, respectively. (2) Input voltage at any terminal may exceed the voltage shown if the current at that terminal is limited to 5 mA. 7.2 ESD Ratings MIN MAX UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±3500 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VS Supply voltage range, voltage at IN+ pin 2.7 12 26 V TA Operating free-air temperature –40 125 °C 7.4 Thermal Information THERMAL METRIC (1) INA183 UNIT DBV (SOT-23) 5 PINS RθJA Junction-to-ambient thermal resistance 164.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 60.1 °C/W RθJB Junction-to-board thermal resistance 36.6 °C/W ψJT Junction-to-top characterization parameter 10.3 °C/W ψJB Junction-to-board characterization parameter 36.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. INA183 SBOSA08 – FEBRUARY 2021 www.ti.com 4 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA183 |
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