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RF5110PCBA データシート(PDF) 2 Page - RF Micro Devices

部品番号 RF5110PCBA
部品情報  3V GSM POWER AMPLIFIER
PDF  14 Pages
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メーカー  RFMD [RF Micro Devices]
ホームページ  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF5110PCBA データシート(HTML) 2 Page - RF Micro Devices

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RF5110
Rev A0 DS050318
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Power Control Voltage (V
APC1,2)
-0.5 to +3.0
V
DC Supply Current
2400
mA
Input RF Power
+13
dBm
Duty Cycle at Max Power
50
%
Output Load VSWR
10:1
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
Temp=25°C, V
CC =3.6 V, VAPC1,2 =2.8 V,
P
IN =+4.5dBm, Freq =880 MHz to 915MHz,
37.5% Duty Cycle, pulse width=1731
μs
Operating Frequency Range
880 to 915
MHz
See evaluation board schematic.
Usable Frequency Range
800 to 950
MHz
Using different evaluation board tune.
Maximum Output Power
33.8
34.5
dBm
Temp=25°C, V
CC =3.6 V, VAPC1,2 =2.8 V
33.1
dBm
Temp=+60°C, V
CC = 3.3 V, VAPC1,2 =2.8 V
Total Efficiency
50
57
%
At P
OUT,MAX, VCC =3.6 V
12
%
P
OUT =+20 dBm
5%
P
OUT =+10 dBm
Input Power for Max Output
+4.5
+7.0
+9.5
dBm
Output Noise Power
-72
dBm
RBW=100kHz, 925MHz to 935MHz,
P
OUT,MIN <POUT <POUT,MAX,
P
IN,MIN <PIN <PIN,MAX, VCC =3.3 V to 5.0V
-81
dBm
RBW=100kHz, 935MHz to 960MHz,
P
OUT,MIN <POUT <POUT,MAX,
P
IN,MIN <PIN <PIN,MAX, VCC =3.3 V to 5.0V
Forward Isolation
-22
dBm
V
APC1,2 =0.3 V, PIN =+9.5dBm
Second Harmonic
-20
-7
dBm
PIN=+9.5dBm
Third Harmonic
-25
-7
dBm
PIN=+9.5dBm
All Other Non-Harmonic
Spurious
-36
dBm
Input Impedance
50
Ω
Optimum Source Impedance
40+j10
Ω
For best noise performance
Input VSWR
2.5:1
P
OUT,MAX-5 dB < POUT <POUT,MAX
4:1
P
OUT<POUT,MAX-5 dB
Output Load VSWR
Stability
8:1
Spurious<-36dBm, V
APC1,2 =0.3 V to 2.6V,
RBW=100kHz
Ruggedness
10:1
No damage
Output Load Impedance
2.6-j1.5
Ω
Load Impedance presented at RF OUT pad
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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