SS210F

SS28F

SS26F

SS25F

SS24F

SS23F

SS22F

SS22F - SS210F

SURFACE MOUNT SCHOTTKY BARRIER DIODES

1 of 2

www.sunmate.tw

CURRENT: 2.0 A

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Schottky Barrier Chip

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Low Power Loss, High Efficiency

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Plastic Case Material has UL Flammability

Ideally Suited for Automatic Assembly

For Use in Low Voltage Application

Guard Ring Die Construction

Classification Rating 94V-O

Features

VOLTAGE RANGE: 20 - 100V

Case:SMBF , Molded Plastic

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Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

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Polarity: Cathode Band or Cathode Notch

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Marking: Type Number

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Weight: 0.0018 ounces,0.05grams

Mechanical Data

0.73 0.77 0.75

0.021 0.20

1.96 2.00 1.98

1.38 1.35

1.32

3.60

3.63

3.57

4.30

4.33

4.27

5.50

5.55

5.45

SMBF

A

E

L

B

C

E

H

D

E

D

A

Dim

Min

Max

Typ

B

C

H

L

All Dimensions in mm

0.019

Maximum Ratings and Electrical Characteristics T

A = 25

°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

V

VRRM

VRMS

VDC

I(AV)

IFSM

VF

2.0

50.0

0.70

Operating junction temperature range

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at TL(see fig.1)

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 2.0A

Maximum DC reverse current

TA=25 C

at rated DC blocking voltage

TA=100 C

Typical junction capacitance (NOTE 1)

IR

0.5

CJ

TJ,

TSTG

75.0

180

pF

mA

Typical thermal resistance (NOTE 2)

Storage temperature range

-65 to +150

-65 to +125

-65 to +150

20

10

0.55

0.85

20

14

20

30

21

30

40

28

40

50

35

50

60

42

60

80

56

80

100

70

100

220

Characteristic

Symbol

Unit

V

V

A

A

V

R

θJA

C

C/W

C