H4RN10FP datasheet(1/5 Pages) HUIXIN

部品番号	H4RN10FP

部品情報	N-Channel 100 V MOSFET

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メーカー	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

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H4RN10FP

Features

• Low R

& FOM

(

)

D S o n

• Extremely low switching loss

• Excellent reliability and uniformity

• Fast switching and soft recovery

Product Name

Package

Marking

H4RN10FP

LFPAK56E

Absolute Maximun Ratings

°C

(

)

T =25

unless otherwise speciﬁed

J

Marking Information

Parameter

V

A

Unit

VDS

VGS

ID

PD

T ,T

J

S T G

Symbols

Drain-Source Voltage

Gate-Source Voltage

( 1 )

Continuous Drain Current

, T =25°C

C

( 3 )

Power dissipation

, T =25°C

C

Operating Junction and Storage Temperature

100

±20

120

653

294

-55 ~ +175

Value

V

w

°C

A

Applications:

• Hot swap

• Load switch

• Soft start

• E-fuse

• Telecommunication systems based

on a 48 V backplane/supply rail

Packing

Qty.

( 2 )

Pulsed drain current

, T =25 °C

C

120

A

( 1 )

Continuous diode forward current

, T =25°C

C

ID,pulse

EAS

( 5 )

Single pulsed avalanche energy

325

mJ

Thermal Characteristics

Parameter

Unit

Symbols

Thermal Resistance from Junction to Case

Typ.

0.45

°C/W

42

R

θ J C

R

θ J A

( 4 )

Thermal Resistance from Junction to Ambient

IS

653

A

( 2 )

Diode pulsed current , T =25°C

C

IS,pulse

V

= 100 V

D S

(

)

R

= 4.8 mΩ Max

( o n )

D S

(

)

I = 120A T =25°C

D

C

Min.

Max.

0.51

H4RN10FP

N-Channel 100 V MOSFET

LFPAK56E

G-Pin4

S-Pin1,2,3

D-Pin5

G

S

D

S

5

1 2

3

4

www.hxkj.hk

+86-769-23622090

huixin@hxkj.hk

Rev.02

Page 1 of 5

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