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L6590D データシート(PDF) 5 Page - STMicroelectronics |
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L6590D データシート(HTML) 5 Page - STMicroelectronics |
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5 / 23 page ![]() 5/23 L6590 (*) Parameters tracking one the other (**) Parameter guaranteed by design, not tested in production (***) Parameters guaranteed by design, functionality tested in production CIRCUIT PROTECTIONS Ipklim Pulse-by-pulse Current Limit di/dt = 120 mA/ µs 550 625 700 mA OVP Overvoltage Protection Icc = 10 mA (*) 16 16.5 17 V LEB Masking Time After MOSFET turn-on (**) 120 ns STANDBY SECTION FSB Oscillator Frequency 19 22 25 kHz Ipksb Peak switch current for Standby Operation Transition from Fosc to FSB 80 mA Ipkno Peak switch current for Normal Operation Transition from FSB to Fosc 190 mA BROWNOUT PROTECTION (L6590D only) Vth Threshold Voltage Voltage either rising or falling 2.4 2.5 2.6 V IHys Current Hysteresis Vpin = 3V -30 -50 -70 µA VCL Clamp Voltage Ipin = 0.5 mA 5.6 6.4 7.2 V THERMAL SHUTDOWN (***) Threshold 150 165 °C Hysteresis 40 °C Symbol Parameter Test Condition Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (continued) Figure 1. Start-up & UVLO Thresholds Figure 2. Start-up Current Generator Start-up UVLO -50 0 50 100 150 6 8 10 12 14 16 Tj [°C] Vcc [V] Vdrain = 40 V 024 68 10 12 3 3.5 4 4.5 5 5.5 Vcc [V] Icc [mA] Tj = -25 °C Tj = 25 °C Tj = 125 °C |
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