STPS30L45C

Characteristics

Doc ID 8002 Rev 4

3/12

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

0.4

mA

Tj = 125 °C

100

200

mA

VF

(1)

Forward voltage drop

Tj = 25 °C

IF = 15 A

0.55

V

Tj = 125 °C

IF = 15 A

0.42

0.50

Tj = 25 °C

IF = 30 A

0.74

Tj = 125 °C

IF = 30 A

0.59

0.67

1.

Pulse test: tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.330 x IF(AV) + 0.011 IF

2

(RMS)

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

02468

10

12

14

16

18

20

0

2

4

6

8

10

12

IF(av) (A)

PF(av)(W)

T

δ=tp/T

tp

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0

25

50

75

100

125

150

0

2

4

6

8

10

12

14

16

18

Tamb(°C)

IF(av)(A)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j-c)

TO-220FPAB

TO-220AB/TO-247/I²PAK/D²PAK

T

δ=tp/T

tp

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(tp)

P

(1 µs)

ARM

ARM

0

0.2

0.4

0.6

0.8

1

1.2

25

50

75

100

125

150

T (°C)

j

P(Tj)

P

(25 °C)

ARM

ARM