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L6932D1.2 データシート(PDF) 4 Page - STMicroelectronics |
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L6932D1.2 データシート(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() L6932 4/10 Pgood threshold Vo rise 90 %Vo Pgood Hysteresis 10 %Vo Pgood saturation Ipgood =1mA 0.2 0.4 V Symbol Parameter Test Condition Min. Typ. Max. Unit Figure 1. Output Voltage vs. Junction Temperature (L6932D1.2) Figure 2. Output Voltage vs. Junction Temperature (L6932D1.8) Figure 3. Output Voltage vs. Junction Temperature (L6932D2.5) Figure 4. Quiescent Current vs. Junction Temperature Figure 5. Shutdown Current vs. Junction Temperature 1.209 1.210 1.210 1.211 1.211 1.212 1.212 1.213 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temp [°C] V 1.788 1.792 1.796 1.800 1.804 1.808 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temp [°C] V 2.495 2.500 2.505 2.510 2.515 2.520 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temp [°C] V 250 260 270 280 290 300 310 -40 -20 0 20 40 60 80 100 120 140 Temp [°C ] Iq (uA) Vin=5V 4 4.5 5 5.5 6 6.5 7 7.5 -40 -20 0 20 40 60 80 100 120 140 Temp [°C ] Ishdn (uA) Vin=5V ELECTRICAL CHARACTERISTCS (continued) |
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