TP65H015G5WS_V01 datasheet(1/13 Pages) RENESAS

部品番号	TP65H015G5WS

部品情報	650V SuperGaN® FET in TO-247-3 (source tab)

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メーカー	RENESAS [Renesas Technology Corp]

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Datasheet

TP65H015G5WS

650V SuperGaN® FET in TO-247-3 (source tab)

R07DS1669EU0400 Rev.4.00

Nov 25, 2025

Page 1

Description

The TP65H015G5WS 650V, 15mΩ gallium nitride

GaN FET is a normally-off device using Renesas’s

Gen V platform. It combines a state-of-the-art high

voltage GaN HEMT with a low voltage silicon

MOSFET to offer superior reliability and

performance.

The Gen V SuperGaN® platform uses advanced epi

and patented design technologies to simplify

manufacturability while improving efficiency over

silicon via lower gate charge, output capacitance,

crossover loss, and reverse recovery charge.

Benefits

■

Superior normally off architecture with D-mode

GaN HEMT

■

Compatible with standard silicon drivers

■

Enhanced noise immunity with a 4V threshold

voltage with no negative gate drive required

■

Enables high-efficiency, high power density, and

reliable power conversion

■

Facilitates cost-effective GaN adoption reducing

system size, weight, and costs

Product and Schematic Diagrams

TP65H015G5WS TO-247-3

Cascode Schematic Symbol

Cascode Device Structure

Features

■

Ultra-fast switching Gen V GaN technology

■

JEDEC-qualified GaN technology

■

Dynamic RDS(on)eff production tested

■

Reduced crossover loss

■

Negligible Qrr

■

RoHS compliant and Halogen-free packaging

Applications

■

AI datacenter and

telecom power supplies

■

E-mobility charging

■

PV inverter

■

UPS

■

BESS

Specifications

VDS (V)

650

VDSS(TR)(V) maximum

725

RDS(on) (mΩ) maximum [1]

18

QOSS (nC) typical

430

QG (nC) typical

74

1.

Dynamic RDS(on) (see Figure 17 and Figure 18)

同様の部品番号 - TP65H015G5WS_V01

メーカー	部品番号	データシート	部品情報
Transphorm Inc	TP65H015G5WS	362Kb / 7P	650V SuperGaN??FET in TO-247 (source tab)

More results

同様の説明 - TP65H015G5WS_V01

メーカー	部品番号	データシート	部品情報
Transphorm Inc	TP65H015G5WS	362Kb / 7P	650V SuperGaN??FET in TO-247 (source tab)
	TP65H035G4QS	1Mb / 13P	650V SuperGaN® FET in TOLL (source tab) Dec. 5, 2023
	TP65H035G4WSQA	726Kb / 13P	650V SuperGaN® FET in TO-247 (source tab) Oct. 29, 21
	TP65H035G4YS	1Mb / 12P	650V SuperGaN® FET in TO-247 (source tab) Oct. 30, 2023
	TP65H050G4BS	1Mb / 15P	650V SuperGaN® FET in TO-263 (source tab) Sep. 14, 2022
	TP65H050G4QS	1Mb / 13P	650V SuperGaN® FET in TOLL (source tab) May. 14, 2023
	TP65H050G4WS	1Mb / 13P	650V SuperGaN® FET in TO-247 (source tab) July. 22, 2021
	TP65H050G4YS	1Mb / 12P	650V SuperGaN® FET in TO-247 (source tab) Dec. 14, 2023
	TP65H070G4QS	2Mb / 13P	650V SuperGaN® FET in TOLL (source tab) August 17, 2023
	TP65H150G4PS	1Mb / 12P	650V SuperGaN® GaN FET in TO-220 (source tab) August 22, 2023

More results

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