2

RF Device Data

Freescale Semiconductor

MRF5S4140HR3 MRF5S4140HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

2 (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

Gate Threshold Voltage

2

3

4

Vdc

Gate Quiescent Voltage

3

4

5

Vdc

Drain-Source On-Voltage

0.1

0.2

0.3

Vdc

Forward Transconductance

—

6.2

—

S

Reverse Transfer Capacitance

—

2.3

—

pF

f = 465 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz

Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

20

21

23

dB

Drain Efficiency

28.5

30

—

%

Adjacent Channel Power Ratio

ACPR

—

-47.6

-45

dBc

Input Return Loss

IRL

—

-14

-9

dB

1. Part internally input matched.