2

RF Device Data

Freescale Semiconductor

MRF5S4125NR1 MRF5S4125NBR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1B (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

10

μAdc

On Characteristics

Gate Threshold Voltage

2

3

4

Vdc

Gate Quiescent Voltage

3.5

4.25

5

Vdc

Drain-Source On-Voltage

0.05

0.175

0.3

Vdc

Reverse Transfer Capacitance

—

2.41

—

pF

Output Capacitance

—

74.61

—

pF

Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

22

23

25

dB

Drain Efficiency

28

30.2

—

%

Adjacent Channel Power Ratio

ACPR

—

-47.6

-45

dBc

Input Return Loss

IRL

—

-15

-9

dB

1. Part internally input matched.