| データシートサーチシステム |
|
AT45DB321E データシート(PDF) 10 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
AT45DB321E データシート(HTML) 10 Page - Renesas Technology Corp |
|
10 / 80 page ![]() DS-AT45DB321E-8784 Rev. N Page 10 9/1/23 © 2023 Renesas Electronics AT45DB321E Datasheet 4. Memory Array To provide optimal flexibility, the AT45DB321E memory array is divided into three levels of granularity comprising of sectors, blocks, and pages. Figure 3 shows each level and details the number of pages per sector and block. Program operations to the DataFlash can be done at the full page level or at the byte level (a variable number of bytes). The erase operations can be performed at the chip, sector, block, or page level. Figure 3. Memory Architecture Diagram Sector 0a = 8 pages 4,096/4,224 bytes Sector 0b = 120 pages 61,440/63,360 bytes Block = 4,096/4,224 bytes 8 Pages Sector 0a Page = 512/528 bytes Page 0 Page 1 Page 6 Page 7 Page 8 Page 9 Page 8,190 Page 8,191 Page 14 Page 15 Page 16 Page 17 Page 18 Sector Architecture Block Architecture Page Architecture Block 0 Block 1 Block 14 Block 15 Block 16 Block 17 Block 1,022 Block 1,023 Block 30 Block 31 Block 32 Block 33 Sector 63 = 128 pages 65,536/67,584 bytes Block 2 Sector 1 = 128 pages 65,536/67,584 bytes Sector 62 = 128 pages 65,536/67,584 bytes Sector 2 = 128 pages 65,536/67,584 bytes |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |