2SC3355 datasheet(1/2 Pages) ISC

部品番号	2SC3355

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC3355

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 12V(Min)

· High Power Gain

· Low Noise and High Gain

APPLICATIONS

· VHF

· UHF

· CATV

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

3

V

IC

Collector Current-Continuous

0.1

A

PC

Total Power Dissipation

600

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

同様の部品番号 - 2SC3355

メーカー	部品番号	データシート	部品情報
NEC	2SC3355	102Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Unisonic Technologies	2SC3355	107Kb / 3P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Unisonic Technologies	2SC3355	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3355	293Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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