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AP4N10AI データシート(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP4N10AI データシート(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP4N10AI 100V N-Channel Enhancement Mode MOSFET AP4N10AI REV1.0 永源微電子科技有限公司 Description The AP4N10AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =4.0A RDS(ON) < 220mΩ @ VGS=10V (Type:175mΩ) Application LED Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP4N10AI SOT23L AP4N10AI 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 4.0 A ID@TA=100℃ Continuous Drain Current, VGS @ 10V1 2.5 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 3.75 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃/W RθJC Thermal Resistance Junction-Case1 30 ℃/W |
同様の部品番号 - AP4N10AI |
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同様の説明 - AP4N10AI |
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