AP3P06AI datasheet(1/9 Pages) APME

部品番号	AP3P06AI

部品情報	-60V P-Channel Enhancement Mode MOSFET

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AP3P06AI

-60V P-Channel Enhancement Mode MOSFET

AP3P06AI Rve3.9

臺灣永源微電子科技有限公司

Description

The AP3P06AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -60V ID =-3 A

RDS(ON) < -180mΩ @ VGS=-10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3P06AI

MS09

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ -10V1

-3.3

A

ID@TA=70℃

Continuous Drain Current, VGS @ -10V1

-1.4

A

IDM

Pulsed Drain Current2

-7

A

PD@TA=25℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

80

℃

/W

SOT-23

同様の部品番号 - AP3P06AI

メーカー	部品番号	データシート	部品情報
A POWER MICROELECTRONIC...	AP3P06BF	1Mb / 7P	-60V P-Channel Enhancement Mode MOSFET
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	AP3P06LI	1Mb / 7P	-60V P-Channel Enhancement Mode MOSFET
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