AP5G03DF

30V N+P-Channel Enhancement Mode MOSFET

AP5G03DF RVE1.1

永源微電子科技有限公司

N-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

35

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.023

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=5A

---

18

25

mΩ

VGS=4.5V , ID=3A

---

24

40

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

1.6

2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

-4.2

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=6A

---

5.8

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.3

---

Ω

Qg

Total Gate Charge (4.5V)

VDS=20V , VGS=4.5V , ID=6A

---

5

---

nC

Qgs

Gate-Source Charge

---

1.11

---

Qgd

Gate-Drain Charge

---

2.61

---

Td(on)

Turn-On Delay Time

VDD=12V , VGS=10V , RG=3.3Ω

ID=6A

---

7.7

---

ns

Tr

Rise Time

---

46

---

Td(off)

Turn-Off Delay Time

---

11

---

Tf

Fall Time

---

3.6

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

416

---

pF

Coss

Output Capacitance

---

62

---

Crss

Reverse Transfer Capacitance

---

51

---

IS

Continuous Source Current1,6

VG=VD=0V , Force Current

---

---

6.2

A

ISM

Pulsed Source Current2,6

---

---

24

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25℃

---

---

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=24V,VGS=10V,L=0.1mH,IAS=21A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.