AP5G10DF datasheet(1/10 Pages) APME

部品番号	AP5G10DF

部品情報	100V NP-Channel Enhancement Mode MOSFET

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AP5G10DF

100V N+P-Channel Enhancement Mode MOSFET

AP5G10DF REV1.0

永源微電子科技有限公司

Description

The AP5G10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS =100V ID =8.8A

RDS(ON) < 120mΩ @ VGS=10V （Type：85mΩ）

VDS = -100V ID =-4.8A

RDS(ON) < 290mΩ @ VGS=-10V （Type：235mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP5G10DF

PDFN3X3-8L

AP5G10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

100

-100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

8.8

4.8

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

5.9

-3.5

A

IDM

Pulsed Drain Current2

28

-14.8

A

EAS

Single Pulse Avalanche Energy3

28

18

mJ

PD@TC=25℃

Total Power Dissipation4

23

21.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

5.4

℃

/W

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