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データシートサーチシステム |
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データシートサーチシステム |
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SBL830 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SBL830 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Rectifier SBL830 www.iscsemi.com 1 FEATURES · Low Power Loss, High Efficiency · High Surge Capability · Guard Ring For Transient Protection APPLICATIONS · Low Voltage, High Frequency Inverters · Polarity Protection ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Maximum repetitive peak reverse voltage 30 V VR(RMS) RMS Reverse Voltage 21 V IF(AV) Average Rectified Forward Current,TC= 95℃ 8 A IFSM non-repetitive Peak forward surge current,8.3ms，Single half sine-wave superimposed onrated load 200 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.9 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 8A -- 0.55 V IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ -- 0.5 mA Rated DC Voltage, TC= 100℃ -- 50 mA |
同様の部品番号 - SBL830 |
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同様の説明 - SBL830 |
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