AP6G02LI datasheet(1/10 Pages) APME

部品番号	AP6G02LI

部品情報	20V NP-Channel Enhancement Mode MOSFET

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AP6G02LI

20V N+P-Channel Enhancement Mode MOSFET

AP6G02LI REV1.0

永源微電子科技有限公司

Description

The AP6G02LI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =7.5A

RDS(ON) < 35mΩ @ VGS=4.5V （Type：28mΩ）

VDS = -20V ID =-6.8A

RDS(ON) < 40mΩ @ VGS=-4.5V（Type：35mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP6G02LI

SOT23-6L

AP6G02LI

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

20

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

7.5

-6.8

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

5.2

-4.5

A

IDM

Pulsed Drain Current2

24

-28

A

EAS

Single Pulse Avalanche Energy3

24

68

mJ

PD@TA=25℃

Total Power Dissipation4

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

105

℃/W

RθJC

Thermal Resistance Junction-Case1

45

℃/W

同様の部品番号 - AP6G02LI

メーカー	部品番号	データシート	部品情報
A POWER MICROELECTRONIC...	AP6G02BF	1Mb / 10P	20V NP-Channel Enhancement Mode MOSFET REV1.0
A POWER MICROELECTRONIC...	AP6G02BLI	1Mb / 10P	20V NP-Channel Enhancement Mode MOSFET

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