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AP10H04DF データシート(PDF) 1 Page - A POWER MICROELECTRONICS

部品番号 AP10H04DF
部品情報  40V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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AP10H04DF データシート(HTML) 1 Page - A POWER MICROELECTRONICS

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AP10H04DF
40V N+N-Channel Enhancement Mode MOSFET
Description
The AP10H04DF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V.
This device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 40V ID =12.5A
RDS(ON) < 8.5mΩ @ VGS=10V
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP10H04DF
PDFN3*3-8L
AP10H04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current1
12.5
A
ID@TC=100℃
Continuous Drain Current1
8.5
A
IDM
Pulsed Drain Current2
60
A
EAS
Single Pulse Avalanche Energy3
48
mJ
IAS
Avalanche Current
31
A
PD@TC=25℃
Total Power Dissipation4
27.8
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient (Steady State)1
60
℃/W
RθJC
Thermal Resistance Junction-Case1
4.5
℃/W
AP10H04DF RVE1.0
永源微電子科技有限公司


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