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AP10H10DF データシート(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP10H10DF データシート(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP10H10DF 100V N+N-Channel Enhancement Mode MOSFET AP10H10DF REV1.0 永源微電子科技有限公司 Description The AP10H10DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =10.3A RDS(ON) < 120mΩ @ VGS=10V (Type:88mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP10H10DF PDFN3*3-8L AP10H10DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Drain Current, VGS @ 10V 10.3 A ID@TC=100℃ Drain Current, VGS @ 10V 6.5 A IDM Pulsed Drain Current1 24.3 A PD@TC=25℃ Total Power Dissipation 1.5 W EAS Single Pulse Avalanche Energy4 61 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Maximum Thermal Resistance, Junctionambient 85 ℃ /W RθJC Maximum Thermal Resistance, Junction-case 8.1 ℃ /W |
同様の部品番号 - AP10H10DF |
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同様の説明 - AP10H10DF |
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