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AP20H03DF データシート(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20H03DF データシート(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP20H03DF 30V N-Channel Enhancement Mode MOSFET AP20H03DF REV1.0 永源微電子科技有限公司 Description The AP20H03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =20A RDS(ON) < 20mΩ @ VGS=10V (Type:15mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20H03DF PDFN3*3-8L AP20H03DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TA=25℃ Continuous Drain Current 20 A ID@TA=70℃ Continuous Drain Current 9.9 A IDM Pulsed Drain Current2 60 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 85 ℃ /W RθJC Thermal Resistance Junction-Case1 4 ℃ /W |
同様の部品番号 - AP20H03DF |
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同様の説明 - AP20H03DF |
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