AP20H04DF datasheet(1/7 Pages) APME

部品番号	AP20H04DF

部品情報	40V NN-Channel Enhancement Mode MOSFET

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AP20H04DF

40V N+N-Channel Enhancement Mode MOSFET

AP20H04DF RVE1.0

永源微電子科技有限公司

Description

The AP20H04DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =20A

RDS(ON) < 25mΩ @ VGS=10V （Type：19mΩ）

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20H04DF

PDFN3*3-8L

AP20H04DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25

℃

Continuous Drain Current1

20

A

ID@TA=70

℃

Continuous Drain Current1

11.6

A

IDM

Pulsed Drain Current2

32

A

EAS

Single Pulse Avalanche Energy3

13

mJ

IAS

Avalanche Current

18

A

PD@TA=25

℃

Total Power Dissipation4

1.9

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient1(t≤10s)

62

℃/W

RθJC

Thermal Resistance Junction-ambient1

8

℃/W

同様の部品番号 - AP20H04DF

メーカー	部品番号	データシート	部品情報
A POWER MICROELECTRONIC...	AP20H04NF	1Mb / 7P	40V NN-Channel Enhancement Mode MOSFET

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同様の説明 - AP20H04DF

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