AP20P03D datasheet(1/7 Pages) APME

部品番号	AP20P03D

部品情報	-30V P-Channel Enhancement Mode MOSFET

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AP20P03D

-30V P-Channel Enhancement Mode MOSFET

AP20P03D REV1.1

永源微電子科技有限公司

Description

The AP20P03D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-20A

RDS(ON) < 42mΩ @ VGS=10V （Type：35mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20P03D

TO-252-3L

AP20P03D XXXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -10V1

-20

A

ID@TC=100

℃

Continuous Drain Current, VGS @ -10V1

-13

A

IDM

Pulsed Drain Current2

-40

A

EAS

Single Pulse Avalanche Energy3

18

mJ

IAS

Avalanche Current

-19

A

PD@TC=25

℃

Total Power Dissipation4

25

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

5

℃/W

同様の部品番号 - AP20P03D

メーカー	部品番号	データシート	部品情報
A POWER MICROELECTRONIC...	AP20P03S	1Mb / 7P	-30V P-Channel Enhancement Mode MOSFET

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同様の説明 - AP20P03D

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