AP50H04NF datasheet(1/7 Pages) APME

部品番号	AP50H04NF

部品情報	40V NN-Channel Enhancement Mode MOSFET

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AP50H04NF

40V N+N-Channel Enhancement Mode MOSFET

AP50H04NF REV1.0

永源微電子科技有限公司

Description

The AP50H04NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =50A

RDS(ON) < 8.0mΩ @ VGS=10V （Type：6.5mΩ）

Application

BLDC

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP50H04NF

PDFN5*6-8L

AP50H04NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

50

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

39

A

IDM

Pulsed Drain Current2

240

A

EAS

Single Pulse Avalanche Energy3

181

mJ

IAS

Avalanche Current

20

A

PD@TC=25℃

Total Power Dissipation4

46

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient (Steady State)1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.7

℃

/W

同様の部品番号 - AP50H04NF

メーカー	部品番号	データシート	部品情報
A POWER MICROELECTRONIC...	AP50H04DF	1Mb / 7P	40V NN-Channel Enhancement Mode MOSFET

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同様の説明 - AP50H04NF

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