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APM32E103CET6-R データシート(PDF) 38 Page - Geehy Semiconductor Co., Ltd. |
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APM32E103CET6-R データシート(HTML) 38 Page - Geehy Semiconductor Co., Ltd. |
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38 / 79 page ![]() www.g eeh y.co m Pag e 37 (3) Positive injection is not possible on these I/Os. a negative injection is induced by VIN<VSS. IINJ(PIN) must never be exceeded. (4) A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must never be exceeded. (5) When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). 5.3.4. Electrostatic discharge (ESD) Table 16 ESD Absolute Maximum Ratings Symbol Parameter Conditions Value Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 ℃ ± 5000 V Note: The samples are measured by a third-party testing organization and are not tested in production. 5.3.5. Static latch-up (LU) Table 17 Static Latch-up Symbol Parameter Conditions Type LU Class of static latch-up TA = +25 ℃/105℃, conforming to EIA/JESD78E CLASS Ⅱ A Note: The samples are measured by a third-party testing organization and are not tested in production. 5.4. On-chip memory 5.4.1. Flash characteristics Table 18 Flash Memory Characteristics Symbol Parameter Conditions Minimum value Typical value Maximum value Unit tprog 16-bit programming time TA = -40~105 ℃ VDD=2.4~3.6V 40 46.08 70 μs tERASE Page (2KBytes) erase time TA = -40~105 ℃ VDD=2.4~3.6V 10 - 30 ms tME Whole erase time TA = 40~105 ℃ VDD=3.3V 10 - 30 ms Vprog Programming voltage TA = -40~105 ℃ 2 - 3.6 V tRET Data saving time TA=125℃ 10.77 - - years NRW Erase cycle TA=85°C 100K - - cycles Note: It is obtained from a comprehensive evaluation and is not tested in production. 5.5. Clock 5.5.1. Characteristics of external clock source 5.5.1.1. High-speed external clock generated by crystal resonator For detailed parameters (frequency, package, precision, etc.) of crystal resonator, please |
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