AP60H02GD datasheet(1/7 Pages) APME

部品番号	AP60H02GD

部品情報	20V NN-Channel Enhancement Mode MOSFET

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AP60H02GD

20V N+N-Channel Enhancement Mode MOSFET

A60H02GD REV1.0

永源微電子科技有限公司

Description

The AP60H02GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =50A

RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.0mΩ）

Application

3.3V MCU Drive

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60H02GD

TO-252-4L

AP60H02GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V

60

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V

30

A

IDM

Pulsed Drain Current note1

120

A

EAS

Single Pulsed Avalanche Energy note2

147.6

mJ

PD@TA=25℃

Power Dissipation

37

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃/W

RθJC

Thermal Resistance, Junction to Case

2

℃

/W

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