HAT1069C datasheet(2/6 Pages) RENESAS

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HAT1069C

R07DS1169EJ0400 Rev.4.00

Page 2 of 5

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

–12

—

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±8

—

IG = ±100

μA, VDS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS = ±6.4 V, VDS = 0

Zero gate voltage drain current

IDSS

—

–1

μA

VDS = –12 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–0.3

—

–1.2

VDS = –10 V, ID = –1 mA

Static drain to source on state

resistance

RDS(on)

—

ID = –1.5 A, VGS = –4.5 V

RDS(on)

—

ID = –1.5 A, VGS = –2.5 V

RDS(on)

—

ID = –1.5 A, VGS = –1.8 V

Forward transfer admittance

|yfs|

—

ID = –1.5 A, VDS = –10 V

Input capacitance

Ciss

—

1380

—

VDS = –10 V

VGS = 0

f = 1 MHz

Output capacitance

Coss

—

235

—

Reverse transfer capacitance

Crss

—

115

—

Total gate charge

—

VDS = –10 V

VGS = –4.5 V

ID = –3 A

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

6.2

—

Turn-on delay time

td(on)

—

VGS = –4 V, ID = –1.5 A

VDD

≅ –10 V

RL = 6.6

Rg = 4.7

Rise time

—

150

—

Turn-off delay time

td(off)

—

490

—

Fall time

—

350

—

Body–drain diode forward voltage

VDF

—

–0.8

–1.1

IF = –4 A, VGS = 0

Note3

Notes: 3. Pulse test

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