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AP3400AI データシート(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP3400AI データシート(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP3400AI 30V N-Channel Enhancement Mode MOSFET AP3400AI REV3.2 永源微電子科技有限公司 Description The AP3400AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6.2A RDS(ON) <28mΩ @ VGS=10V （Type:20mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3400AI SOT23L A09T 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current 6.2 A ID@TA=70℃ Continuous Drain Current 4.9 A IDM Pulsed Drain Current2 20 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃/W |
同様の部品番号 - AP3400AI |
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同様の説明 - AP3400AI |
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