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AP3400DI データシート(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP3400DI データシート(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP3400DI 20V N-Channel Enhancement Mode MOSFET AP3400DI RVE1.0 永源微電子科技有限公司 Description The AP3400DI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =3.2A RDS(ON) < 56mΩ @ VGS=10V （Type：45mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3400DI SOT23L A09T 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current TA = 25 ℃ 3.2 A ID Continuous Drain Current TA = 100 ℃ 2 A IDM Pulsed Drain Current 12 A PD Power Dissipation TA = 25 ℃ 0.77 W RθJA Thermal Resistance, Junction to Case 162 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ |
同様の部品番号 - AP3400DI |
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同様の説明 - AP3400DI |
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