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LL4148 データシート(PDF) 2 Page - Vishay Siliconix |
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LL4148 データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() www.vishay.com 2 Document Number 85557 Rev. 1.7, 06-Feb-04 VISHAY LL4148 / LL4448 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 5 mA VF 0.62 0.72 V IF = 50 mA VF 0.86 1 V IF = 100 mA VF 0.93 1 V Reverse current VR = 20 V IR 25 nA VR = 20 V, Tj = 150 °C IR 50 µA VR = 75 V IR 5 µA Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 100 V Diode capacitance VR = 0, f = 1MHz, VHF = 50 mV CD 4pF Rectification efficiency VHF = 2 V, f = 100 MHz ηr 45 % Reverse recovery time IF = IR = 10 mA, iR = 1 mA trr 8ns IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω trr 4ns Fig. 1 Forward Current vs. Forward Voltage 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage(V) 2.0 94 9096 LL4148 Scattering Limit Tj =25 ° C Fig. 2 Forward Current vs. Forward Voltage 94 9097 Tj =25 ° C LL4448 Scattering Limit 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage(V) 2.0 |
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