M36DR232B datasheet(28/46 Pages) STMICROELECTRONICS

部品番号	M36DR232B

部品情報	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product

PDF	46 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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M36D232A, M36DR232B

28/46

Table 26. Flash Write AC Characteristics, Write Enable Controlled

(TA =–40 to 85 °C; VDDF = 1.65V to 2.2V

Figure 9. Flash Write AC Waveforms, WF Controlled

Note: 1. Address are latched on the falling edge of WF, Data is latched on the rising edge of WF.

Symbol

Alt

Parameter

Flash

Unit

100

120

Min

Max

Min

Max

tAVAV

tWC

Address Valid to Next Address Valid

100

120

tAVWL

tAS

Address Valid to Write Enable Low

tDVWH

tDS

Input Valid to Write Enable High

tELWL

tCS

Chip Enable Low to Write Enable Low

tGHWL

Output Enable High to Write Enable Low

tPLQ7V

RPF Low to Reset Complete During Program/Erase

µs

tVDHEL

tVCS

VCCF High to Chip Enable Low

µs

tWHDX

tDH

Write Enable High to Input Transition

tWHEH

tCH

Write Enable High to Chip Enable High

tWHGL

tOEH

Write Enable High to Output Enable Low

tWHWL

tWPH

Write Enable High to Write Enable Low

tWLAX

tAH

Write Enable Low to Address Transition

tWLWH

tWP

Write Enable Low to Write Enable High

AI90210

A0-A20

DQ0-DQ15

VALID

VDDF