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STPS1L30MF データシート(PDF) 1 Page - STMicroelectronics |
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STPS1L30MF データシート(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() August 2006 Rev 1 1/7 STPS1L30MF Low drop power Schottky rectifier in flat package Main product characteristics Features and benefits ■ Very low profile package: 0.85 mm ■ Backward compatible with standard STmite footprint ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop for higher efficiency and extended battery life ■ Low thermal resistance ■ Avalanche capability specified Order Code Description Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite flat, this device is intended for use in very low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the very small size of the package this device fits battery powered equipment (cellular, notebook, PDA’s, printers) as well as chargers and PCMCIA cards. IF(AV) 1 A VRRM 30 V Tj (max) 150° C VF (max) 0.39 V Part number Marking STPS1L30MF F1L3 K A STmite flat (DO222-AA) Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward voltage 2 A IF(AV) Average forward current Tc = 140° C δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C 1200 W Tstg Storage temperature range -65 to + 150 °C Tj Maximum operating junction temperature(1) 150 °C dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25° C) 10000 V/µs 1. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj --------------- 1 Rth j a – () -------------------------- < www.st.com |
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同様の説明 - STPS1L30MF |
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