NPN Power Transistor

FZT853

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

BVCEO

Collector-Emitter Sustaining Voltage

IC= 1mA

100

--

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 100mA, IB= 5mA

--

50

mV

VCE(sat)-2

IC= 2A, IB= 100mA

--

150

VCE(sat)-3

IC= 5A, IB= 500mA

--

340

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A, IB= 500mA

--

1.25

V

VBE(ON)

Base-Emitter Turn-On Voltage

IC= 5A, VCE= 2V

1.1

V

ICEO

Collector-Base Cutoff Current

VCE= 150V

--

10

nA

IEBO

Emitter Cutoff Current

VEB= 6V

--

10

nA

hFE-1

DC Current Gain

IC= 10mA, VCE= 2V

100

--

--

hFE-2

IC= 2A, VCE= 2V

100

300

--

hFE-3

IC= 4A, VCE= 2V

50

--

--

hFE-4

IC= 10A, VCE= 2V

20

--

--

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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