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IRFP064B データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 IRFP064B
部品情報  isc N-Channel MOSFET Transistor
PDF  7 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP064B データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
IRFP064B
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2023-11-09
1
FEATURES
·
Drain Current –ID= 200A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 60V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 9mΩ(Max)@VGS= 10V
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·
motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(TA=25℃)
THERMAL CHARACTERISTICS
Note:EAS* VDD=55V，L=0.4mH，RG=25Ω
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
200
A
IDM
Drain Current-Single Pluse
800
A
EAS
*
Single pulse avalanche energy
3800
mJ
PD
Total Dissipation @TC=25℃
714
W
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.21
℃
/W


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