isc N-Channel MOSFET Transistor

SPS02N60C3

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V; ID= 0.25mA

600

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 600V; VGS= 0V

--

1.0

uA

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0V

--

±

100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID= 80uA

2.1

3.9

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 1.1A

--

3.0

Ω

VSD

Forward On-Voltage

IS= 1.8A; VGS= 0V

--

1.2

V

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose,

nor does ISC assume any liability arising from the application or use of any products, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages.

It is strictly prohibited to reprint or copy part or all of this datasheet without permission from ISC.