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SBL1630CT データシート(PDF) 1 Page - Sirectifier Semiconductors |
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SBL1630CT データシート(HTML) 1 Page - Sirectifier Semiconductors |
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1 / 2 page ![]() SBL1630CT thru SBL1645CT FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any SBL1630CT SBL1635CT SBL1640CT SBL1645CT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Low VF Schottky Barrier Rectifiers Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=95 C IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC (Note 1) VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance (Note 2) TSTG Storage Temperature Range Maximum Ratings 16 250 0.55 0.5 50 350 -55 to +150 A A V Unit mA pF o o o C o NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. Typical Thermal Resistance (Note 3) 2.5 ROJC C/W o TJ Operating Temperature Range -55 to +125 C o A=Anode, C=Cathode, TAB=Cathode A A C C(TAB) A C A Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB |
同様の部品番号 - SBL1630CT |
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同様の説明 - SBL1630CT |
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