Silicon PNP Power Transistor

FZT951

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA, IB= 0A

-60

--

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -100uA, IE= 0A

-100

--

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -100uA, IC= 0A

-7

--

V

ICBO

Collector Cutoff Current

VCB= -80V, IB= 0A

--

-100

nA

IEBO

Emitter Cutoff Current

VEB= -6V, IC= 0A

--

-100

nA

hFE

DC Current Gain

IC= -10mA, VCE= -1V

100

--

--

IC= -2A, VCE= -1V

100

300

--

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -100mA, IB= -10mA

--

-50

mV

IC= -1A, IB= -100mA

--

-140

mV

IC= -2A, IB= -200mA

--

-210

mV

VBE(sat)

Base-Emitter Saturation Voltage

IC= -1A, IB= -100mA

--

-900

mV

VBE(on)

Base-Emitter On Voltage

IC=-2A,VCE=-2V

--

-850

mV

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

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nor does ISC assume any liability arising from the application or use of any products, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages.

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