IXYN100N120C3

IGBT

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCES

Collector-Emitter Breakdown Voltage

VGE= 0V, IC= 250uA

1200

--

V

VGE(th)

Gate-Emitter Threshold Voltage

VCE= VGE , IC=250uA

3.0

5.0

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100A, VGE= 15V

--

3.5

V

ICES

Zero Gate Voltage Collector Current

VCE= 1200V, VGE= 0V

--

10

uA

IGES

Gate-Emitter Leakage Current

VGE=±20V, VCE= 0V

--

±

100

nA

PACKAGE OUTLINE (UNIT: MM):

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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