| データシートサーチシステム |
|
MJD45H11 データシート(PDF) 2 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
MJD45H11 データシート(HTML) 2 Page - STMicroelectronics |
|
2 / 5 page ![]() THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 6.25 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage IC =30 mA 80 V ICES Collect or Cut-off Current VCB =rated VCEO VBE =0 10 µA IEBO Emitt er Cut-off Current VEB =5V 50 µA VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =8 A IB =0.4 A 1 V VBE(s at) ∗ Base-Emitter Saturat ion Voltage IC =8 A IB = 0.8 A 1.5 V hFE ∗ DC Current G ain IC =2 A VCE =1 V IC =4 A VCE =1 V 60 40 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2% ∗ For PNP types the values are intented negative. Safe Operating Area Derating Curves MJD44H11 / MJD45H11 2/5 |
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |