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MBR400100CT データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR400100CT データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() MBR400100CT Schottky Barrier Rectifier www.iscsemi.com 1 FEATURES · High Current Output · Low Forward Voltage · 175℃ Operating Junction Temperature APPLICATIONS · These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRRM Repetitive Peak Reverse Voltage 100 V IF(AV) Average Forward Current, Per Device,TC=100℃ 400 A IFSM Non-Repetitive Peak Surge Current, Halfwave,single phase,60Hz 2500 A dv/dt Voltage Rate Of Change Rated VR 1000 V/µs TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case Per Leg 0.45 ℃ /W |
同様の部品番号 - MBR400100CT |
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同様の説明 - MBR400100CT |
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