MTP6N60 datasheet(1/9 Pages) STMICROELECTRONICS

部品番号	MTP6N60

部品情報	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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MTP6N60

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) =1

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR

INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

MTP6N60

600 V

< 1. 2

Ω

6.8 A

1

2

3

TO-220

November 1996

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Voltage (VGS = 0)

600

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)

600

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (cont inuous) at T c =25

oC6.8

A

ID

Drain Current (cont inuous) at T c =100

oC4.2

A

IDM(

•)

Drain Current (pulsed)

30

A

Ptot

Total Dissipation at Tc =25

oC

125

W

Derating Factor

1

W/

oC

Tstg

St orage Temperat ure

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1/9

同様の部品番号 - MTP6N60

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