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Features

VBO : 32V

Breakover voltage range : 28 to 36V

Applications

Functioning as a trigger diode with a fixed voltage

reference, the DB3 can be used in conjunction

with triacs for simplified gate control circuits or as

a starting element in fluorescent lamp ballasts.

Absolute Maximum Ratings

(Limiting values)

Parameter

Symbol

Value

Unit

Repetitive peak on-state current (tp=20μ s F=120 Hz)

ITRM

2

A

Operating junction temperature range

Tj

-40 ~ +125

℃

Storage temperature range

Tstg

-40 ~ +125

℃

Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the

recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may

affect device reliability.

Electrical Characteristics

(Tj=25℃ unless otherwise specified)

Parameter

Symbol

Test Conditions

Value

Unit

MIN.

28

TYP.

32

Breakover voltage*

VBO

C=22nF**

MAX.

36

V

Breakover voltage symmetry

|VBO1-VBO2| C=22nF**

MAX.

±

3

V

Dynamic breakover voltage*

△

V

VBO and VF at 10mA

MIN.

5

V

Output voltage*

VO

see diagram 2(R=20Ω )

MIN.

5

V

Breakover current*

IBO

C=22nF**

MAX.

50

μ

A

Rise time*

tr

see diagram 3

MAX.

2

μ

s

Leakage current*

IR

VR=0.5VBO max

MAX.

10

μ

A

*Applicable to both forward and reverse directions.

**Connected in parallel to the device.

Dimensions in inches and (millimeters)

0.146(3.7)

0.130(3.3)

0.063(1.6)

0.055(1.4)

0.020(0.5)

0.012(0.3)

0.020(0.5)

0.012(0.3)

MINI MELF (LL-34)

DIA.

SILICON BIDIRECTIONAL DIAC

LLDB3

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